GaN Systems

Date:2018-11-15 views:23546

Brand Introduction

GaN Systems is a power device semiconductor design company headquartered in Ottawa, Canada. The company focuses on the research and development of gallium nitride power devices, and its products fully realize the advantages of gallium nitride materials in power conversion and control applications. To overcome the bottleneck of silicon devices in terms of switching speed, temperature, voltage, and current, GaN Systems has developed a full power range of gallium nitride power switch transistors, which are widely used in markets such as communication power supply, industrial power supply, and transportation power supply.

GaN Systems' unique lsland Technology ® Technological revolution has improved product cost, performance and mass production, making chips smaller and more efficient. The Fabless mode allows GaN Systems to leverage more multi generation resources, coupled with other innovative means, to easily adopt their gallium nitride devices in any design solution. GaN Systems has a management and design team with decades of industry experience and successful records. The company will continue to be committed to expanding the application of gallium nitride devices in the field of power conversion.






Product Introduction

100V enhanced gallium nitride transistor

product number
IDS
RDS(on)
QG
Overall dimensions
Packaging heat dissipation
GS61004B
38 A
16 mΩ
3.3 nC
4.6 x 4.4 x 0.51mm
bottom
GS61008P
90 A
7 mΩ
8 nC
7.6 x 4.6 x 0.51mm
bottom
GS61008T
90 A
7 mΩ
8 nC
7.0 x 4.0 x 0.54mm
top


650V enhanced gallium nitride transistor

product number
IDS
RDS(on)
QG
Overall dimensions
Packaging heat dissipation
GS-065-004-1-L
4 A
450 mΩ
0.8 nC
5.0 x 6.0 x 0.85mm
bottom
GS-065-008-1-L
8 A
225 mΩ
1.5 nC
5.0 x 6.0 x 0.85mm
bottom
GS-065-011-1-L
11 A
150 mΩ
2.2 nC
5.0 x 6.0 x 0.85mm
bottom
GS-065-011-2-L
11 A
150 mΩ
2.2 nC
8.0 x 8.0 x 0.9mm
bottom
GS-065-018-2-L
18 A
78 mΩ
4 nC
8.0 x 8.0 x 0.9mm
bottom
GS-065-030-2-L
30 A
50 mΩ
6.7 nC
8.0 x 8.0 x 0.9mm
bottom
GS66502B
7.5 A
200 mΩ
1.6 nC
5.0 x 6.6 x 0.51mm
bottom
GS66504B
15 A
100 mΩ
3.3 nC
5.0 x 6.6 x 0.51mm
bottom
GS66506T
22.5 A
67 mΩ
4.5 nC
5.6 x 4.5 x 0.54mm top
GS66508B
30 A
50 mΩ
6.1 nC
7.0 x 8.4 x 0.51mm
bottom
GS66508T
30 A
50 mΩ
6.1 nC
7.0 x 4.5 x 0.54mm
bottom
GS-065-060-5-B-A
60 A
25 mΩ
14 nC
11.0 x 9.0 x 0.63mm
bottom
GS-065-060-5-T-A
60 A
25 mΩ
14 nC
9.0 x 7.6 x 0.69mm
top
GS-065-060-3-B
60 A
25 mΩ
14 nC
11.0 x 9.0 x 0.45mm bottom
GS66516B
60 A
25 mΩ
14.2 nC

11.0 x 9.0 x 0.54mm

bottom
GS-065-060-3-T
60 A
25 mΩ
14 nC

9.2 x 7.8 x 0.49mm

top
GS66516T
60 A
25 mΩ
14.2 nC
9.0 x 7.6 x 0.54mm top
GS-065-150-1-D2
150 A
10 mΩ
33 nC
12.6 x 5.6 x 0.3mm
chip


Top